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Modelling and Simulation with Spice of Power VDMOSFET Transistor

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Abstract (2. Language): 
This paper provides a behavioral model in Pspice for a power MOSFET rated at 60V / 80 A for a wide temperature range. The Pspice model was built using device parameters extracted through experiment. The static and dynamic behavior of the power MOSFET is simulated and compared to the measured data to show the accuracy of the Pspice model. The temperature dependent behavior was simulated and analyzed.
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